Tunneling giant magnetoresistance in coevaporated Fex(SiO)1−x thin films

M. Anas (1) , C. Bellouard (1) , M. Vergnat (2, 1)

1 LPM - Laboratoire de physique des matériaux
2 IJL - Institut Jean Lamour

Fe x (SiO) 1x thin films, with volume fraction x ranging from 0.04 to 0.6, have been prepared by coevaporation. Magnetization, resistivity, and magnetoresistance measurements show that the behavior of this composite is metallic like for x0.35. For 0.2x0.27, the confrontation of all measurements prove the existence of a tunneling giant magnetoresistance between ferromagnetic grains at T300 K, where the mean radius of the grains is estimated to be about 1 nm.

Domaines: Physique [physics]; Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

M. Anas, C. Bellouard, M. Vergnat. Tunneling giant magnetoresistance in coevaporated Fex(SiO)1−x thin films. Journal of Applied Physics, 2000, 88 (10), pp.6075-6077. ⟨10.1063/1.1321020⟩. ⟨hal-02113437⟩