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Communication Dans Un Congrès Année : 2017

Characterization of a new HV/HR CMOS Sensor in LF150nm Process for the ATLAS Inner Tracker Upgrade

Z. Chen
T. Hemperek
  • Fonction : Auteur
T. Hirono
  • Fonction : Auteur
P. Rymaszewski
  • Fonction : Auteur
N. Wermes
  • Fonction : Auteur

Résumé

A HV/HR CMOS detector prototype called LF-CPIX, has been designed in LFoundry 150nm technology. The front-end electronics has been implemented using both NMOS and PMOS transistors, inside the charge collection diode, with a pitch of 250 μm × 50 μm. This demonstrator is an implementation of a matrix of smart pixels where the diode is composed by a Deep Nwell, and P-type substrate is used as a depleted sensor. Three types of pixels have been developed: passive pixels, analog-digital pixels, analog pixels. The analog pixels can be connected to the FE-I4 IC, which is the present readout IC of the innermost ATLAS pixel layers. The different versions of the LF-CPIX demonstrators are described, characterization of the different pre-amplifiers flavors with external injection signal and55Fe source are presented for the digital pixels. Finally radiation hardness results are discussed.
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Dates et versions

hal-02097380 , version 1 (11-04-2019)

Identifiants

Citer

Y. Degerli, F. Balli, M. Barbero, S. Bhat, P. Breugnon, et al.. Characterization of a new HV/HR CMOS Sensor in LF150nm Process for the ATLAS Inner Tracker Upgrade. 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, Oct 2017, Atlanta, United States. ⟨10.1109/NSSMIC.2017.8532967⟩. ⟨hal-02097380⟩
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