High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications

Mohamed Ridaoui (1, 2) , Alain-Bruno Fadgie-Djomkam (3) , Matej Pastorek (3) , Nicolas Wichmann (3, 4) , Abdelatif Jaouad (1, 2) , Hassan Maher (1, 2) , S. Bollaert (3, 4)

1 LN2 - Laboratoire Nanotechnologies Nanosystèmes
2 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN

Domaines: Sciences de l'ingénieur [physics]

Mohamed Ridaoui, Alain-Bruno Fadgie-Djomkam, Matej Pastorek, Nicolas Wichmann, Abdelatif Jaouad, et al.. High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications. EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Oct 2016, Londres, United Kingdom. ⟨hal-02097329⟩