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A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Abstract : Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In 2 O 3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.
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Adrica Kyndiah, Abduleziz Ablat, Seymour Guyot-Reeb, Thorsten Schultz, Fengshuo Zu, et al.. A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors. Scientific Reports, Nature Publishing Group, 2018, 8, pp.10946. ⟨10.1038/s41598-018-29220-0⟩. ⟨hal-02095229⟩

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