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Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances

Abstract : MOSFETs variability in irradiated CIS up to 10 MGy (SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.
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https://hal.archives-ouvertes.fr/hal-02092843
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Submitted on : Monday, April 8, 2019 - 2:54:10 PM
Last modification on : Sunday, June 26, 2022 - 12:11:16 PM

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  • HAL Id : hal-02092843, version 1
  • OATAO : 22907

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Serena Rizzolo, Vincent Goiffon, Marius Sergent, Franck Corbière, Sébastien Rolando, et al.. Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances. Radiations Effects on Components and Systems (RADECS), Oct 2017, Geneva, Switzerland. pp.1-4. ⟨hal-02092843⟩

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