Secured Failure Analysis Methodology for Accurate Diagnostic of Defects in GaN HEMT Technologies
Résumé
III-V wide bandgap disruptive technology is positioned as a leader for high power segments operating at high frequency or under switching mode. Still, it is needed to investigate these transistors to push the maturity towards higher levels and to address elevated junction temperatures. Concerning analog RF applications, more than two decades of studies lay the main technological process basis. However, if failure signatures and their associated defects are now issues likely to be understood as individual problems, the global failure behavior in active high frequency analog devices still poses challenges to overcome. This paper is a contribution to the failure analysis studies on GaN technologies by providing a methodology for ensuring the validity of the stress analysis; this procedure is suitable even for a single stress test campaign, when usually several accelerated life tests are needed to separate concurrently proceeding effects. This methodology is based on the use of non-destructive and eventually destructive characterization techniques, as well as electrical TCAD modelling.
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