Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack

I.Z. Mitrovic (1) , S.N. Supardan (1) , D. Hesp (2) , V.R. Danak (2) , S. Hall (2) , Sylvie Schamm-Chardon (3, 4) , S. Dentoni Litta (5) , P.E. Hellstrom (5) , M. Östling (6)

1 Department of Electrical Engineering and Electronics
2 Stephenson Institute for Renewable Energy
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 CEMES - Centre d'élaboration de matériaux et d'études structurales
5 School of ICT, KTH Royal Institute of Technology
6 KTH - KTH Royal Institute of Technology [Stockholm]

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Physique [physics]

I.Z. Mitrovic, S.N. Supardan, D. Hesp, V.R. Danak, S. Hall, et al.. Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. 19th Workshop on Dielectrics in Microelectronics (WODIM), Jun 2016, Catania, Italy. ⟨hal-02082411⟩