Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

Soren Roesgaard (1) , Etienne Talbot (2) , Constantinos Hatzoglou (2) , John Lundsgaard Hansen (3) , Brian Julsgaard (3)

1 Aarhus University [Aarhus]
2 GPM - Groupe de physique des matériaux
3 Department of Physics and Astronomy [Aarhus]

Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76–1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 °C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Soren Roesgaard, Etienne Talbot, Constantinos Hatzoglou, John Lundsgaard Hansen, Brian Julsgaard. Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography. Materials Research Express, 2019, 6 (6), pp.065005. ⟨10.1088/2053-1591/ab0948⟩. ⟨hal-02082137⟩