Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

E. Luna (1) , O. Delorme (2) , L. Cerutti (2, 3) , E. Tournié (2, 3) , J-B Rodriguez (2, 3) , A. Trampert (1)

1 PDI - Paul-Drude-Institut für Festkörperelektronik
2 IES - Institut d’Electronique et des Systèmes
3 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

Domaines: Electronique

E. Luna, O. Delorme, L. Cerutti, E. Tournié, J-B Rodriguez, et al.. Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness. Semiconductor Science and Technology, 2018, 33 (9), pp.094006. ⟨10.1088/1361-6641/aad5c4⟩. ⟨hal-02080292⟩