Antimonide-based optoelectronic devices epitaxially grown on Silicon

E. Tournié (1, 2) , L. Cerutti (1, 2) , J.-B. Rodriguez (1, 2) , J.-P. Perez (1, 2) , A. N. Baranov (1, 2) , R. Teissier (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

Domaines: Electronique

E. Tournié, L. Cerutti, J.-B. Rodriguez, J.-P. Perez, A. N. Baranov, et al.. Antimonide-based optoelectronic devices epitaxially grown on Silicon. International nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States. ⟨hal-02078268⟩