Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes

O. Delorme (1) , L. Cerutti (1, 2) , E. Luna (3) , R. Kudrawiec (4) , J. Kopaczek (4) , M.P. Polak , M. Gladysiewicz (4) , A. Trampert (3) , E. Tournié (1, 2) , J.-B. Rodriguez (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 PDI - Paul-Drude-Institut für Festkörperelektronik
4 Wroclaw University of Science and Technology

Domaines: Electronique

O. Delorme, L. Cerutti, E. Luna, R. Kudrawiec, J. Kopaczek, et al.. Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes. 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States. ⟨hal-02078153⟩