Large Improvement of Data Retention in Nanocrystal-Based Memories on Silicon Using InAs Quantum Dots Embedded in SiO2

Moïra Hocevar (1, 2) , Nicolas Baboux (1) , Alain Poncet (1) , Michel Gendry (2) , Abdelkader Souifi (1)

1 INL - DE - INL - Dispositifs Electroniques
2 INL - H&N - INL - Hétéroepitaxie et Nanostructures

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]

Moïra Hocevar, Nicolas Baboux, Alain Poncet, Michel Gendry, Abdelkader Souifi. Large Improvement of Data Retention in Nanocrystal-Based Memories on Silicon Using InAs Quantum Dots Embedded in SiO2. IEEE Transactions on Electron Devices, 2009, 56 (11), pp.2657-2663. ⟨10.1109/TED.2009.2030659⟩. ⟨hal-02070630⟩