A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

G. Mugny (1, 2, 3) , F.G. Pereira (1, 2, 3) , D. Rideau (1) , F. Triozon (2) , Y.M. Niquet (4) , M. Pala (3) , D. Garetto (5) , C. Delerue (6)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
4 INAC - Institut Nanosciences et Cryogénie
5 Synopsys Inc.
6 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum Drift-Diffusion (QDD) solvers, such as the quasi-Fermi level, the quantum potential and the quasi-ballistic saturation velocity. In particular, the mobility in saturation regime is discussed and an approach based on the Scharfetter-Gummel scheme is presented, bridging the gap between NEGF and QDD frameworks.

Mots clés: FDSOI; NEGF; quantum transport; mobility; QDD

Domaines: Micro et nanotechnologies/Microélectronique

G. Mugny, F.G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, et al.. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. 2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩. ⟨hal-02065220⟩