Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

F. Pereira (1, 2, 3) , D. Rideau (1) , O. Nier (1) , C. Tavernier (1) , F. Triozon (3) , D. Garetto (4) , G. Mugny (1, 3, 5) , B. Sklenard (1) , G. Hiblot (2, 1) , M. Pala (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 Synopsys Inc.
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We have studied the mobility in the FDSOI devices as a function of silicon thickness, doping, surface orientation and applying different back biases. This study is also done in the near-spacer-region that is partially inverted. Simulations have been obtained with a self-consistent Poisson-Schrödinger which provides a precise energy distribution of carriers and, allied to a Kubo-Greenwood carrier mobility solver, performs a quantum corrected drift diffusion (QCDD) model, capable of capturing non local effects on transport (tunneling) and mobility (influence of geometry).

Mots clés: FDSOI; transport; Kubo-Greenwood; QCDD; Poisson-Schrödinger; mobility

Domaines: Micro et nanotechnologies/Microélectronique

F. Pereira, D. Rideau, O. Nier, C. Tavernier, F. Triozon, et al.. Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.49-52, ⟨10.1109/ULIS.2015.7063770⟩. ⟨hal-02063611⟩