Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μ m

Abstract : Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er3+ ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.
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https://hal.archives-ouvertes.fr/hal-02057401
Contributor : Sébastien Cueff <>
Submitted on : Tuesday, March 5, 2019 - 11:57:11 AM
Last modification on : Tuesday, April 2, 2019 - 1:35:03 AM

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J. Ramirez, S. Cueff, Y. Berencen, C. Labbé, B. Garrido. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μ m. Journal of Applied Physics, American Institute of Physics, 2014, 116 (8), pp.083103. ⟨10.1063/1.4893706⟩. ⟨hal-02057401⟩

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