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Article Dans Une Revue International Journal of Applied Engineering Research Année : 2017

Analytical Admittance and Noise Calculations in InGaAs transistor channels

Résumé

In this contribution, we analysis the small-signal admittance and the corresponding noise of the high electron mobility transistors under a continuation branching of the current between channel and gate. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The real part of admittance and the noise spectra exhibit resonances in high frequency associated to the oscillations in the channel. The appearance of the resonances is discussed as function of the geometrical channel parameters (length, thickness and doping concentration).

Domaines

Electronique
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Dates et versions

hal-02055184 , version 1 (03-03-2019)

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  • HAL Id : hal-02055184 , version 1

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Abdel Madjid Mammeri, Fatima Zohra Mahi, Luca Varani. Analytical Admittance and Noise Calculations in InGaAs transistor channels. International Journal of Applied Engineering Research, 2017, 12, pp.4199 - 4204. ⟨hal-02055184⟩
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