Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

R. Alcotte (1) , M. Martin (1) , J. Moeyaert (1) , R. Cipro (1) , S. David (1) , F. Bassani (1) , F. Ducroquet (2) , Y. Bogumilowicz (3) , E. Sanchez (4) , Z. Ye (4) , X.Y. Bao (4) , J.B. Pin (4) , T. Baron (1)

1 LTM - Laboratoire des technologies de la microélectronique
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 Applied Materials, Santa Clara

Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

Domaines: Micro et nanotechnologies/Microélectronique

R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, et al.. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility. APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩. ⟨hal-02053234⟩