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Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films

Abstract : Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
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Submitted on : Wednesday, January 8, 2020 - 11:51:01 AM
Last modification on : Tuesday, August 11, 2020 - 12:58:02 PM
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T. Gushi, M. Jovičević Klug, J. Peña-Garcia, Sambit Ghosh, J. P. Attané, et al.. Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films. Nano Letters, American Chemical Society, 2019, 19 (12), pp.8716. ⟨10.1021/acs.nanolett.9b03416⟩. ⟨hal-02042459⟩

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