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, Dependences of (a) and (b) H res , (c) and (d) a, (e) and (f) M eff

/. M-s-on-t-cu-for-si and . Sio, NiFe(t NiFe ¼ 4;8;12)/Al(2)Ox and Si/SiO 2 /NiFe(t NiFe ¼ 4;8;12)/Cu(t Cu )/Al(2)Ox (nm) stacks. The square crossed symbols correspond to the patterned sample. (a)-(b) correspond to data recorded at 10 GHz. (c)-(d) were deduced from f-dependences of DH pp . (e) and (f) were deduced from f-dependences of H res . (g) and (h) were measured independently by magnetometry, vol.2