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Article Dans Une Revue Surface and Interface Analysis Année : 1996

Deconvolution of SIMS Depth Profiles of Boron in Silicon

Brice Gautier
' R Prost
  • Fonction : Auteur
G Prudon
  • Fonction : Auteur
J C Dupuy
  • Fonction : Auteur

Résumé

We have measured the depth resolution function of the SIMS analysis of boron in silicon for different experimental conditions and fitted this function with an analytical expression initially proposed by Dowsett et ul. We use this analytical depth resolution function for the implementation of an iterative deconvolution algorithm, taking into account several properties of the signal, such as positivity and regularity. This algorithm is described precisely. The algorithm is tested on several theoretical structures and then implemented for the deconvolution of real structures. Of borondoped silicon layers in silicon. In particular, a sample constituted by six consecutive delta layers and a 75 A thick layer are deconvolved. It is shown that the asymmetry of the profiles is complftely removed and that the full width at half-maximum of the deconvolved delta layers can be reduced down to 41 A. It is also shown that a layer whose real thickness is smaller than the measured width of the resolution function can be easily distinguished from a delta layer, and its thickness estimated.
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Dates et versions

hal-02019066 , version 1 (14-02-2019)

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  • HAL Id : hal-02019066 , version 1

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Brice Gautier, ' R Prost, G Prudon, J C Dupuy. Deconvolution of SIMS Depth Profiles of Boron in Silicon. Surface and Interface Analysis, 1996, 24, pp.733 - 145. ⟨hal-02019066⟩
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