Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC

Didier Chaussende (1) , L. Parent-Bert (1) , Yj Shin (1) , Thierry Ouisse (1) , T. Yoshikawa

1 LMGP - Laboratoire des matériaux et du génie physique

Domaines: Matériaux

Didier Chaussende, L. Parent-Bert, Yj Shin, Thierry Ouisse, T. Yoshikawa. Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy. ⟨hal-02016977⟩