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Communication Dans Un Congrès Année : 2015

Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents

Résumé

We have investigated the seeding stage of 4H-SiC top seeded solution growth through the systematic observation of surface morphologies and numerical simulation. Different growth temperatures, C- and Si-polarities, and different solvents have been studied. This is the first report of transient nucleation of parasitic 3C-SiC at the early stage of solution growth in pure Si solvent even at high temperature. This unusual phenomenon was attributed to a huge temperature difference between the seed crystal and solvent surface at the seeding stage. We demonstrated that preheating of the seed crystals or addition of Al were effective to prevent such parasitic 3C-SiC nucleation.
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Dates et versions

hal-02016968 , version 1 (13-02-2019)

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Yun Ji Shin, Beatrice Doisneau, Kanaparin Ariyawong, Pierre Brosselard, Didier Chaussende. Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents. International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩. ⟨hal-02016968⟩
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