Non-linear model of electronic band structure to highly tensile-strained Germanium

Jose Escalante (1) , A. Gassenq (2) , S. Tardif (3) , K. Guiloy (2) , N. Pauc (2) , F. Rieutord (3) , V. Calvo (2) , G. Osvaldo Dias (4) , D. Rouchon (4) , J. Widiez (4) , J. Hartmann (4) , D. Fowler (4) , A. Chelnokov (4) , V. Reboud (4) , I. Duchemin (1) , Y-M. Niquet (1)

1 LSIM - Laboratory of Atomistic Simulation
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
3 NRS - Nanostructures et Rayonnement Synchrotron
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We propose a non-linear model based on tight-binding method to obtain, as a function of deformation, the evolution of conduction and valence band around Γ-bandgap of germanium.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique; Micro et nanotechnologies/Microélectronique

Jose Escalante, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, et al.. Non-linear model of electronic band structure to highly tensile-strained Germanium. 2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.77-78, ⟨10.1109/Group4.2015.7305955⟩. ⟨hal-02016620⟩