Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures

K. Guilloy (1) , N. Pauc (1) , A. Gassenq (1) , P. Gentile (1) , S. Tardif (2) , F. Rieutord (2) , J. Escalante (3) , I. Duchemin (3) , Y. M. Niquet (3) , V. Calvo (1) , G. Osvaldo Dias (4) , D. Rouchon (4) , J. Widiez (4) , J. Hartmann (4) , D. Fowler (4) , A. Chelnokov (4) , V. Reboud (4) , R. Geiger (5) , T. Zabel (5) , H. Sigg (5) , J. Faist (6)

1 SiNaps - Silicon Nanoelectronics Photonics and Structures
2 NRS - Nanostructures et Rayonnement Synchrotron
3 LSIM - Laboratory of Atomistic Simulation
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 PSI - Paul Scherrer Institute
6 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]

Germanium has been highly investigated as a potential light emitting material for the monolithic integration of photonic devices on silicon-based electronics. Indeed, despite the indirect nature of its bandgap, sufficient tensile strain could yield efficient light emission. We present here an experimental study of the influence of tensile strain on the direct bandgap of germanium nanostructures, using both bottom-up and top-down approaches [1].

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique; Micro et nanotechnologies/Microélectronique

K. Guilloy, N. Pauc, A. Gassenq, P. Gentile, S. Tardif, et al.. Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures. 2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.173-174, ⟨10.1109/Group4.2015.7305919⟩. ⟨hal-02016595⟩