Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

T. Zabel (1) , E. Marin (1) , R. Geiger (1) , C. Bozon (2) , S. Tardif (3) , K. Guilloy (4) , A. Gassenq (4) , J. Escalante (5) , Y. M. Niquet (5) , I. Duchemin (5) , J. Rothman (6) , N. Pauc (4) , F. Rieutord (3) , V. Reboud (6) , V. Calvo (4) , J. Hartmann (7) , J. Widiez (6) , A. Tchelnokov (8) , J. Faist (9) , H. Sigg (1)

1 PSI - Paul Scherrer Institute
2 Institute for Quantum Electronics
3 NRS - Nanostructures et Rayonnement Synchrotron
4 SiNaps - Silicon Nanoelectronics Photonics and Structures
5 LSIM - Laboratory of Atomistic Simulation
6 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
7 LTM - Laboratoire des technologies de la microélectronique
8 DOPT - Département d'Optronique
9 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]

Cavity enhanced photoluminescence at a wavelength as long as 5 μm is obtained in uniaxial tensile strained GeOI micro-bridges. We show, using temperature dependent photoluminescence spectroscopy, a crossover to fundamental direct bandgap and reveal from a mode analysis the free carrier induced loss increase.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique; Micro et nanotechnologies/Microélectronique

T. Zabel, E. Marin, R. Geiger, C. Bozon, S. Tardif, et al.. Highly strained direct bandgap Germanium cavities for a monolithic laser on Si. 2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.40-41, ⟨10.1109/GROUP4.2016.7739082⟩. ⟨hal-02016549⟩