In-depth caracterisation of the structural phase change of Germanium Telluride for RF switches

A. Leon (1) , D. Saint-Patrice , N. Castellani (2) , G. Navarro , V. Puyal , B. Reig (2) , Florence Podevin (1) , P. Ferrari (1) , E. Perret (3)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 LCIS - Laboratoire de Conception et d'Intégration des Systèmes

This paper presents the phase change characterization of Germanium Telluride GeTe used for RF switches when a direct heating is performed. The study describes the method to activate the transition between crystalline and amorphous states, allowing to reach a resistance ratio of 1.8.10 4 between both states. RF measurements were performed up to 40 GHz on fabricated switches, showing an ON-state resistance of 1.7 Ω. An OFF-state capacitance of 5.4 fF was extracted from simulation, resulting in an estimated cutoff frequency of 17 THz. The study also shows the importance of the GeTe thickness to optimize the performance of the device.

Mots clés: RF switches; phase-change material; GeTe; direct heating

Domaines: Electronique; Micro et nanotechnologies/Microélectronique; Electromagnétisme

A. Leon, D. Saint-Patrice, N. Castellani, G. Navarro, V. Puyal, et al.. In-depth caracterisation of the structural phase change of Germanium Telluride for RF switches. 2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Sep 2017, Pavia, Italy. pp.1-3. ⟨hal-02013347⟩