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Communication Dans Un Congrès Année : 2016

GaAs and InGaAs heteroepitaxy on blanket and patterned Si(100) 300mm substrates by MOCVD and their physical properties

Jean-Philippe Pin
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hal-02011750 , version 1 (08-02-2019)

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  • HAL Id : hal-02011750 , version 1

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Thierry Baron, Reynald Alcotte, Mickaël Martin, Romain Cipro, Tiphaine Cerba, et al.. GaAs and InGaAs heteroepitaxy on blanket and patterned Si(100) 300mm substrates by MOCVD and their physical properties. 2016 E-MRS Fall Meeting,, Sep 2016, Warsaw, Poland. ⟨hal-02011750⟩
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