New Insights in Z2-FET Mechanisms at Variable Temperature

Hassan El Dirani (1) , L. Onestas (1) , Philippe Ferrari (1) , Sorin Cristoloveanu, (1) , Y. Solaro (2) , Pascal Fonteneau (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

The Z2-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching devicewith zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD)protection of Fully Depleted SOI (FDSOI) circuits. We study the impact of low and high temperature on thedevice performance, showing its effect on the output characteristics, triggering voltage (VON) and leakagecurrent (ILeak).

Mots clés: Fully Depleted SOI (FDSOI); Temperature Dependence.; Electrostatic Discharge (ESD); Zero Impact Ionization and Subthreshold Slope FET (Z2-FET); Leakage Current; Triggering Voltage

Domaines: Micro et nanotechnologies/Microélectronique

Hassan El Dirani, L. Onestas, Philippe Ferrari, Sorin Cristoloveanu,, Y. Solaro, et al.. New Insights in Z2-FET Mechanisms at Variable Temperature. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.153, ⟨10.1109/ULIS.2015.7063796⟩. ⟨hal-02008394⟩