Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

S. Cristoloveanu (1) , S. Athanasiou (1) , M. Bawedin (1) , Ph. Galy (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

The supercoupling effect is demonstrated experimentally by monitoring the electron and hole currents in a field-effect transistor provided with p+ and n+ contacts. According to the polarity of the voltage applied to the front and back gates, only electrons or holes can be detected in 7-nm thick silicon layers. Thicker layers are not affected by supercoupling and can accommodate electrons and holes together.

Mots clés: FDSOI MOSFET; four-gate transistor; silicon-on-insulator; supercoupling

Domaines: Micro et nanotechnologies/Microélectronique

S. Cristoloveanu, S. Athanasiou, M. Bawedin, Ph. Galy. Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET. IEEE Electron Device Letters, 2017, 38 (2), pp.157-159. ⟨10.1109/LED.2016.2637563⟩. ⟨hal-02006384⟩