Scanning microwave microscopy for non-destructive characterization of SOI wafers

L. Michalas (1) , I. Ionica (2) , E. Brinciotti (3) , L. Pirro (2) , F. Kienberger (4) , S. Cristoloveanu (2) , Romolo Marcelli (1)

1 IMM - Istituto per la Microelettronica e Microsistemi [Roma]
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 Keysight Technologies,
4 Keysight Technologies

The paper presents an experimental study aiming to highlight the potential of scanning microwave microscopy (SMM) as a non-destructive high precision characterization tool for SOI technology. Two identical SOI wafers having passivated and non-passivated top Si film surfaces have been assessed. Differential microwave measurements were found capable of detecting differences in the structures of the two samples. The results support the conclusion that, after appropriate calibration method, SMM may provide a powerful tool offering nm scale characterization for SOI technology.

Mots clés: Silicon On Insulator (SOI); Scanning Microwave Microscopy (SMM); interface quality; nanoscale characterization

Domaines: Micro et nanotechnologies/Microélectronique

L. Michalas, I. Ionica, E. Brinciotti, L. Pirro, F. Kienberger, et al.. Scanning microwave microscopy for non-destructive characterization of SOI wafers. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.238-241, ⟨10.1109/ULIS.2016.7440097⟩. ⟨hal-02004364⟩