New features in planar SiGe channel tunnel FETs performance and operation

Cyrille Le Royer (1) , Louis Hutin (1) , Sebastien Martinie (1) , Pascal Nguyen (1) , Sylvain Barraud (1) , F Glowacki (1) , Sorin Cristoloveanu, (2) , Maud Vinet (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.

Domaines: Micro et nanotechnologies/Microélectronique

Cyrille Le Royer, Louis Hutin, Sebastien Martinie, Pascal Nguyen, Sylvain Barraud, et al.. New features in planar SiGe channel tunnel FETs performance and operation. 2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.91-92. ⟨hal-02004156⟩