New features in planar SiGe channel tunnel FETs performance and operation

Abstract : We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.
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https://hal.archives-ouvertes.fr/hal-02004156
Contributor : Frédérique Ducroquet <>
Submitted on : Friday, February 1, 2019 - 3:46:30 PM
Last modification on : Wednesday, April 3, 2019 - 2:07:25 AM

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  • HAL Id : hal-02004156, version 1

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Cyrille Le Royer, Louis Hutin, Sebastien Martinie, Pascal Nguyen, Sylvain Barraud, et al.. New features in planar SiGe channel tunnel FETs performance and operation. 2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.91-92. ⟨hal-02004156⟩

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