Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance

C. Le Royer (1) , A. Villalon (1) , S. Martinie (1) , P. Nguyen (1) , S. Barraud (1) , F. Glowacki (1) , S. Cristoloveanu (2) , M. Vinet (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

We report the fabrication and the characterization of Tunnel FETs fabricated on SiGe-On-Insulator with a High K Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on ID(VG) characteristics is presented and analyzed: compressive Si0.75Ge0.25 enables to increase by a factor of 20 the saturation currents, even at small gate length (LG=50nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).

Mots clés: SOI; SGOI; ION; SS; Tunnel FET; SiGe; TFET

Domaines: Micro et nanotechnologies/Microélectronique

C. Le Royer, A. Villalon, S. Martinie, P. Nguyen, S. Barraud, et al.. Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.69-72, ⟨10.1109/ULIS.2015.7063775⟩. ⟨hal-02004064⟩