Extraction of the Parasitic Bipolar Gain Using the Back-Gate in Ultrathin FD SOI MOSFETs

Fanyu Liu (1) , Irina Ionica (1) , Maryline Bawedin (1) , Sorin Cristoloveanu (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

We propose a new method to extract the gain of the parasitic bipolar transistor in ultrathin fully-depleted silicon-on-insulator MOSFETs. The method is based on the modulation of the parasitic bipolar effect by back-gate biasing. The bipolar gain can be determined for each transistor, without the need to compare the long and short devices. The proposed method is validated by experimental data and numerical simulations.

Mots clés: band-to-band tunneling; back gate; parasitic bipolar effect; ultra-thin FD SOI

Domaines: Micro et nanotechnologies/Microélectronique

Fanyu Liu, Irina Ionica, Maryline Bawedin, Sorin Cristoloveanu. Extraction of the Parasitic Bipolar Gain Using the Back-Gate in Ultrathin FD SOI MOSFETs. IEEE Electron Device Letters, 2015, 36 (2), pp.96-98. ⟨10.1109/LED.2014.2385797⟩. ⟨hal-02004030⟩