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1/f Noise Characterization of Piezoresistive Nano-Gauges for MEMS Sensors

Abstract : This paper describes the study carried out in order to characterize the influence of the main fabrication steps of the silicon nano-gauge on their l/f noise. Geometry of the nano-gauge, doping level, thinning process of gauges, doping before or after gauges patterning, release process and treatments for trap curing have been studied. Gauges release has a great impact on the l/f noise: it increases the noise by a factor of up to 100 for the smallest gauges. N 2 H 2 annealing and O 2 plasma treatment reduce the noise generated by the release of the gauge. We assume that the origin behind the noise increase is the trapping-detrapping of carriers in surface traps of the nano-gauge.
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https://hal.archives-ouvertes.fr/hal-02002311
Contributor : Christoforos Theodorou Connect in order to contact the contributor
Submitted on : Thursday, January 31, 2019 - 3:52:51 PM
Last modification on : Wednesday, November 3, 2021 - 6:02:43 AM

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Antoine Nowodzinski, Dihia Sidi Ahmed, Christoforos Theodorou, Alexandra Kournela, Helene Duchemin, et al.. 1/f Noise Characterization of Piezoresistive Nano-Gauges for MEMS Sensors. 2018 IEEE SENSORS, Oct 2018, New Delhi, India. pp.1382, ⟨10.1109/ICSENS.2018.8589872⟩. ⟨hal-02002311⟩

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