Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T. Karatsori (1, 2) , C. Theodorou (1) , S. Haendler (3) , C. Dimitriadis (2) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 Aristotle University of Thessaloniki, Department of Physics
3 ST-CROLLES - STMicroelectronics [Crolles]

In this work the impact of the source - drain series resistance mismatch on the drain current variability has been investigated for 28nm Bulk MOSFETs. For the first time a mismatch model including the local fluctuations of the threshold voltage, the current gain factor and the source - drain series resistance both in linear and saturation region is presented. Furthermore, it is proved that the influence of source - drain series resistance mismatch is attenuated at the saturation region, due to lower drain current sensitivity to series resistance variation. The experimental results were further verified by Monte Carlo simulation with normally distributed MOSFET parameters.

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

T. Karatsori, C. Theodorou, S. Haendler, C. Dimitriadis, G. Ghibaudo. Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.92-95, ⟨10.1109/ULIS.2016.7440060⟩. ⟨hal-02002291⟩