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Low frequency noise statistical characterization of 14nm FDSOI technology node

Abstract : In this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented.
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https://hal.archives-ouvertes.fr/hal-02002261
Contributor : Christoforos Theodorou <>
Submitted on : Thursday, January 31, 2019 - 3:35:38 PM
Last modification on : Saturday, November 21, 2020 - 3:32:54 AM

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E. Ioannidis, C. Theodorou, S. Haendler, M.-K. Joo, E. Josse, et al.. Low frequency noise statistical characterization of 14nm FDSOI technology node. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.181-184, ⟨10.1109/ULIS.2015.7063803⟩. ⟨hal-02002261⟩

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