Transmission electron microscopy combined with in-situ biasing of semiconducting NWs for the study of dopants, surface charges and metal contacts - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Transmission electron microscopy combined with in-situ biasing of semiconducting NWs for the study of dopants, surface charges and metal contacts

M. den Hertog
Fichier non déposé

Dates et versions

hal-02001710 , version 1 (31-01-2019)

Identifiants

  • HAL Id : hal-02001710 , version 1

Citer

M. den Hertog. Transmission electron microscopy combined with in-situ biasing of semiconducting NWs for the study of dopants, surface charges and metal contacts. Inauguration TEMPOS (Transmission Electron Microscopy at Palaiseau Orsay Saclay), Dec 2018, Orsay, France. ⟨hal-02001710⟩

Collections

UGA CNRS NEEL
28 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More