Towards new methods for the electrical characterization of boron and phosphorus in solar grade silicon

Aurélie Fauveau (1) , Benoit Martel (1) , Sébastien Dubois (1) , Jordi Veirman (1) , Anne Kaminski (2) , Frédérique Ducroquet (2)

1 INES - Institut National de L'Energie Solaire
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Mots clés: compensated silicon; Electrical characterization; Hall Effect; hopping

Domaines: Micro et nanotechnologies/Microélectronique

Aurélie Fauveau, Benoit Martel, Sébastien Dubois, Jordi Veirman, Anne Kaminski, et al.. Towards new methods for the electrical characterization of boron and phosphorus in solar grade silicon. 2016 E-MRS Spring Meeting: Symposium K: Semiconductors: GroupIV semiconductors materials research - growth, characterization and applications to electronics and spintronics, May 2016, Lille, France. ⟨hal-02001066⟩