A. J. Theuwissen, {CMOS} image sensors: State-of-the-art, SolidState Electronics, vol.52, issue.9, pp.1401-1406, 2008.

P. P. Lee, R. C. Gee, R. M. Guidash, T. H. Lee, and E. R. Fossum, Active pixel sensor fabricated using cmos/ccd process technology, Proceedings of IEEE Workshop CCD and Advanced Image Sensors, 1995.

N. Teranishi, A. Kohono, Y. Ishihara, E. Oda, and K. Arai, No image lag photodiode structure in the interline ccd image sensor, Electron Devices Meeting, vol.28, pp.324-327, 1982.

B. C. Burkey, W. C. Chang, J. Littlehale, T. H. Lee, T. J. Tredwell et al., The pinned photodiode for an interlinetransfer ccd image sensor, Electron Devices Meeting, vol.30, pp.28-31, 1984.

W. M. Sansen and C. J. Das, A simple model of ion-implanted jfets valid in both the quadratic and the subthreshold regions, IEEE Journal of Solid-State Circuits, vol.17, issue.4, pp.658-666, 1982.

S. Park and H. Uh, The effect of size on photodiode pinch-off voltage for small pixel cmos image sensors, Microelectronics Journal, vol.40, issue.1, pp.137-140, 2009.

A. Lahav, R. Reshef, and A. Fenigstein, Enhanced x-ray cmos sensor panel for radio and fluoro application using a low noise charge amplifier wixel with a partially pinned pd, International Image Sensor Workshop, 2011.

J. Tan, B. Buttgen, and A. J. Theuwissen, Analyzing the radiation degradation of 4-transistor deep submicron technology cmos image sensors, IEEE Sensors Journal, vol.12, issue.6, pp.2278-2286, 2012.

C. Y. Chao, Y. C. Chen, K. Y. Chou, J. J. Sze, F. L. Hsueh et al., Extraction and estimation of pinned photodiode capacitance in cmos image sensors, IEEE Journal of the Electron Devices Society, vol.2, issue.4, pp.59-64, 2014.

X. Yang, X. Ge, and A. J. Theuwissen, Investigating transfer gate potential barrier by feed-forward effect measurement, International Image Sensor Workshop (IISW 2015), 2015.

V. Goiffon, M. Estribeau, J. Michelot, P. Cervantes, A. Pelamatti et al., Pixel level characterization of pinned photodiode and transfer gate physical parameters in cmos image sensors, IEEE Journal of the Electron Devices Society, vol.2, issue.4, pp.65-76, 2014.

Y. Xu, X. Ge, and A. J. Theuwissen, A potential-based characterization of the transfer gate in cmos image sensors, IEEE Transactions on Electron Devices, vol.63, issue.1, pp.42-48, 2016.

A. Pelamatti, V. Goiffon, A. De-ipanema-moreira, P. Magnan, C. Virmontois et al., Comparison of pinning voltage estimation methods in pinned photodiode cmos image sensors, IEEE Journal of the Electron Devices Society, vol.4, issue.2, pp.99-108, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01420126

A. Theuwissen, Cmos image sensors: State-of-the-art and future perspectives, Solid State Circuits Conference, pp.21-27, 2007.

N. Teranishi and N. Mutoh, Partition noise in ccd signal detection, IEEE Transactions on Electron Devices, vol.33, issue.11, pp.1696-1701, 1986.

L. Colquitt, N. Bluzer, and R. Mckee, Charge partition noise in charge-coupled devices, Optical Engineering, vol.26, issue.10, p.992, 1987.

, Sentaurus Device User Guide, Synopsys, 2015.

A. Pelamatti, V. Goiffon, M. Estribeau, P. Cervantes, and P. Magnan, Estimation and modeling of the full well capacity in pinned photodiode cmos image sensors, IEEE Electron Device Letters, vol.34, issue.7, pp.900-902, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00854018

H. Bethe and M. I. Technology, Radiation Laboratory, Theory of the Boundary Layer of Crystal Rectifiers, ser, 1942.

Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2009.

A. Krymski and K. Feklistov, Estimates for scaling of pinned photodiodes, Image Sensor Workshop, 2005.

C. Chen, Z. Bing, W. Junfeng, and W. Longsheng, Measurement of charge transfer potential barrier in pinned photodiode cmos image sensors, Journal of Semiconductors, vol.37, issue.5, p.54007, 2016.

N. Teranishi, The pinned photodiode, International Meeting on Front-End Electronics, 2016.

O. Marcelot, M12) is a research scientist of physic of photodetector at ISAE. He got in 2007 a PhD Degree from the University Paul Sabatier of Toulouse, France, he joined Espros AG, 2008.

V. Goiffon, Since then, he has been working as an Associate Professor at ISAE-SUPAERO on CMOS image sensors design and characterization. He has co-authored more than 30 journal papers, S'08-M'09) received his M.S. (2005) and Ph.D. (2008) degrees in E.E. respectively from SUPAERO and Univ. of Toulouse

, he joined ISE TCAD in Zurich. Hes now working at SYNOPSYS Switzerland as application engineer manager, supporting Sentaurus TCAD users on many applications (process/device simulation, from high power devices up to nanowire-FET, as well as memories, Franck Nallet received his Ph.D. (2001) degrees in E.E. from, 2002.

P. Magnan, After being a research scientist involved in CMOS design up to 1993, he moved to image sensors research in ISAE, in Toulouse. He is currently full Professor there and Head of Image Sensor Research Group, IEDM DSM subcommittee in 2011, 2012, and in the IISW TPC in, 2007.