Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Olivier Marcelot (1) , Vincent Goiffon (1) , Mélanie Raine (2) , Olivier Duhamel (2) , Marc Gaillardin (2) , Romain Molina (1) , Pierre Magnan (1)

1 DEOS - Département Electronique, Optronique et Signal
2 DAM/DIF - DAM Île-de-France

As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.

Mots clés: Charge coupled devices; Charge transfer; Charge; Transfer inefficiency; CMOS image sensors (CIS); Deep submicrometer process; Trapped charge; Radiation effects

Domaines: Traitement du signal et de l'image [eess.SP]

Olivier Marcelot, Vincent Goiffon, Mélanie Raine, Olivier Duhamel, Marc Gaillardin, et al.. Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects. IEEE Transactions on Electron Devices, 2015, 62 (6), pp.2965-2970. ⟨10.1109/TNS.2015.2497405⟩. ⟨hal-01997957⟩