Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties

Olivier Marcelot (1) , Sergey Maximenko , Pierre Magnan (1)

1 DEOS - Département Electronique, Optronique et Signal

Application of low doped epitaxial layers and the increase of complexity of silicon photodiode design require the knowledge of the basic physical parameters such as minority carrier lifetime or diffusion length in order to improve the photodiode performance simulation. In this paper, EBIC technique is used to evaluate minority carrier lifetime and diffusion length on a silicon photodiode. Particular focus is to compare plan view and cross-section view testing geometry, and also to evaluate artefacts introduced by high injection conditions unavoidable in lifetime measurement.

Mots clés: Scanning electron microscopy (SEM) -Electron beam induced current (EBIC); Semiconductor materials measurements

Domaines: Optique / photonique

Olivier Marcelot, Sergey Maximenko, Pierre Magnan. Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties. IEEE Transactions on Electron Devices, 2014, 61 (7), pp.2437-2442. ⟨10.1109/TED.2014.2323997⟩. ⟨hal-01996539⟩