Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani (1, 2) , Dominique Planson (1, 2) , Pascal Bevilacqua (1, 2) , J B Fonder (3) , B Choucoutou (4) , Hervé Morel (1, 2) , Luong Viet Phung (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CALY Technologies
4 SuperGrid Institute SAS

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

Mots clés: 4H-SiC bipolar diode; high current stress; double-pulse test; device processing; high voltage device; device robustness

Domaines: Energie électrique

Besar Asllani, Dominique Planson, Pascal Bevilacqua, J B Fonder, B Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2. ⟨hal-01985994⟩