SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

L'hysteresis de la tension de seuil des MOSFET SiC de puissance et son impact sur le fonctionnement en régime de court-circuit

Besar Asllani (1) , Hervé Morel (1) , Dominique Planson (1) , Asad Fayyaz (2) , Alberto Castellazzi (2)

1 EE - Ampère, Département Energie Electrique
2 Power Electronics Machines and Control (PEMC) Group

V TH subthreshold hysteresis is an aspect of MOSFET’s threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

Mots clés: VTH instabillities; reliability; VTH Hysteresis; Short Circuit; V TH Hysteresis; SiC MOSFET; V TH instabillities

Domaines: Micro et nanotechnologies/Microélectronique

Besar Asllani, Hervé Morel, Dominique Planson, Asad Fayyaz, Alberto Castellazzi. SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩. ⟨hal-01984359⟩