Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

O. Loto (1) , M. Florentin (1) , C. Masante (1) , N. Donato (2) , M. Hicks (3) , C. Pakpour-Tabrizi (3) , R. Jackman (3) , V. Zuerbig (4) , P. Godignon (5) , D. Eon (1) , Julien Pernot (1) , F. Udrea (6) , E. Gheeraert (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 Department of Engineering [Cambridge]
3 UCL - University College of London [London]
4 Fraunhofer IAF - Fraunhofer Institute for Applied Solid State Physics
5 CNM - National Centre for Microelectronic
6 CAM - University of Cambridge [UK]

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

O. Loto, M. Florentin, C. Masante, N. Donato, M. Hicks, et al.. Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors. IEEE Transactions on Electron Devices, 2018, 65 (8), pp.3361-3364. ⟨10.1109/TED.2018.2847340⟩. ⟨hal-01977929⟩