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Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

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https://hal.archives-ouvertes.fr/hal-01973292
Contributor : Matthieu Bugnet <>
Submitted on : Tuesday, January 8, 2019 - 11:32:49 AM
Last modification on : Thursday, January 23, 2020 - 6:22:12 PM

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  • HAL Id : hal-01973292, version 1

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Z Mi, Z. Zhao, S Woo, M. Bugnet, M Djavid, et al.. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (36), pp.364006. ⟨hal-01973292⟩

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