Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

Z Mi , Z. Zhao (1) , S Woo , M. Bugnet (2, 3) , M Djavid , X. Liu (4) , J Kang , X. Kong (4) , J. Ji (5) , H. Guo , Z. Liu (6) , G. Botton (7)

1 n-Gimat Inc.
2 Department of Materials Science and Engineering, McMaster University
3 Brockhouse Institute of Materials Research and Canadian Centre for Electron Microscopy, McMaster University
4 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
5 MOE Key Laboratory of Macromolecular Synthesis and Functionalization
6 EAST CHINA UNIVERSITY
7 CCEM

Domaines: Matériaux; Matériaux

Z Mi, Z. Zhao, S Woo, M. Bugnet, M Djavid, et al.. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. Journal of Physics D: Applied Physics, 2016, 49 (36), pp.364006. ⟨hal-01973292⟩