Sensitivity to Laser Fault Injection: CMOS FD-SOI vs. CMOS bulk

J.-M. Dutertre (1) , Vincent Beroulle (2) , Philippe Candelier (3) , Stephan de Castro (1, 4) , Louis-Barthelemy Faber (3) , Marie-Lise Flottes (4) , Philippe Gendrier (3) , David Hely (3) , Régis Leveugle (5) , Paolo Maistri (5) , Giorgio Di Natale (4) , Athanasios Papadimitriou (2) , Bruno Rouzeyre (4)

1 Mines Saint-Étienne MSE - École des Mines de Saint-Étienne
2 LCIS - Laboratoire de Conception et d'Intégration des Systèmes
3 ST-CROLLES - STMicroelectronics [Crolles]
4 TEST - Test and dEpendability of microelectronic integrated SysTems
5 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés

Integrated circuits (ICs) laser illumination was originally used for emulation of radioactive ionizing particules effects on that devices. Today, it is also a mean for injecting faults into the computations of secure ICs for the purpose of retrieving secret data. The CMOS FD-SOI technology is expected to be less sensitive to laser fault injection than the more usual CMOS bulk technology. We report in this work an experimental assessment of the interest of using FD-SOI rather than CMOS bulk to decrease laser sensitivity. Our experiments were conducted on test chips at the 28 nm node for both technologies with laser pulse durations in the picosecond and nanosecond ranges. We also discuss the interest of using bulk current sensors along with FD-SOI technology to achieve optimal detection of laser fault injection attempts.

Mots clés: BBICS; Laser fault injection; CMOS Bulk; FDSOI

Domaines: Micro et nanotechnologies/Microélectronique

J.-M. Dutertre, Vincent Beroulle, Philippe Candelier, Stephan de Castro, Louis-Barthelemy Faber, et al.. Sensitivity to Laser Fault Injection: CMOS FD-SOI vs. CMOS bulk. IEEE Transactions on Device and Materials Reliability, 2019, 19 (1), pp.6-15. ⟨10.1109/TDMR.2018.2886463⟩. ⟨hal-01971932⟩