Doping of low-Tg phosphate glass with Al2O3, B2O3 and SiO2: Part II- insertion mechanism of Al2O3 and B2O3 in phosphate network characterized by 1D/2D solid-state NMR - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Chemistry and Physics Année : 2018

Doping of low-Tg phosphate glass with Al2O3, B2O3 and SiO2: Part II- insertion mechanism of Al2O3 and B2O3 in phosphate network characterized by 1D/2D solid-state NMR

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https://hal.science/hal-01969845

Soumis le : vendredi 4 janvier 2019-15:38:47

Dernière modification le : mercredi 17 avril 2024-13:15:07

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hal-01969845 , version 1 (04-01-2019)

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P. Rajbhandari, Lionel Montagne, G. Tricot. Doping of low-Tg phosphate glass with Al2O3, B2O3 and SiO2: Part II- insertion mechanism of Al2O3 and B2O3 in phosphate network characterized by 1D/2D solid-state NMR. Materials Chemistry and Physics, 2018, 218, pp.122-129. ⟨10.1016/j.matchemphys.2018.07.031⟩. ⟨hal-01969845⟩

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