Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection

L. Höglund (1) , J.B. Rodriguez (2, 3) , R. Marcks von Würtemberg (1) , S. Naureen (1) , R. Ivanov (1) , C. Asplund , Rodolphe Alchaar (2, 3) , Philippe Christol (2, 3) , A. Rouvié (4) , J. Brocal (4) , O. Saint-Pé (4) , E. Costard (1)

1 IRnova AB - Electrum 236
2 IES - Institut d’Electronique et des Systèmes
3 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
4 Airbus Defence and Space [Toulouse]

Domaines: Electronique; Micro et nanotechnologies/Microélectronique; Optique / photonique

L. Höglund, J.B. Rodriguez, R. Marcks von Würtemberg, S. Naureen, R. Ivanov, et al.. Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection. QSIP2018, Jun 2018, Stockholm, Sweden. pp.158-163, ⟨10.1016/j.infrared.2018.10.036⟩. ⟨hal-01962902⟩