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Room temperature current modulation in large area electronic junctions of spin crossover thin films

Abstract : We report large-area (∼3 mm2), pinhole free crossbar junctions of thin films of the mol. complex [Fe(HB(tz)3)2] displaying spin transition around 336 K. The charge transport in the thinner junctions (10 and 30 nm) occurs by a tunneling mechanism, which is not affected substantially by the spin transition. The thicker junctions (100 and 200 nm) exhibit rectifying behavior and a reproducible drop of their elec. resistance by ca. 65-80% when switching the mols. from the high-spin to the low-spin state. This current modulation is ascribed to a bulk-limited charge transport mechanism via a thermally activated hopping process. The demonstrated possibility of resistance switching in ambient conditions provides appealing prospects for the implementation of mol. spin crossover materials in electronic and spintronic devices.
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https://hal.archives-ouvertes.fr/hal-01961778
Contributor : Marie-Hélène Gulli <>
Submitted on : Thursday, December 20, 2018 - 10:58:08 AM
Last modification on : Thursday, August 27, 2020 - 12:49:24 PM

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Victoria Shalabaeva, Karl Ridier, Sylvain Rat, Maria D. Manrique-Juarez, L. Salmon, et al.. Room temperature current modulation in large area electronic junctions of spin crossover thin films. Applied Physics Letters, American Institute of Physics, 2018, 112 (1), pp.013301/1-013301/5. ⟨10.1063/1.5017458⟩. ⟨hal-01961778⟩

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