Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Crystallography Année : 2011

Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing

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https://hal.science/hal-01951268

Soumis le : mardi 11 décembre 2018-12:27:30

Dernière modification le : mardi 5 décembre 2023-18:08:07

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hal-01951268 , version 1 (11-12-2018)

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Magali Putero, Toufik Ouled-Khachroum, Marie-Vanessa Coulet, Damien Deleruyelle, Eric Ziegler, et al.. Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing. Journal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩. ⟨hal-01951268⟩

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